Product Summary

The M29W128GL-70N6E is a 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode. The M29W128GL-70N6E is divided into 64-Kword/128-Kbyte uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the command interface of the memory. The M29W128GL-70N6E supports Asynchronous Random Read and Page Read from all blocks of the memory array. The M29W128GL-70N6E also features a Write to Buffer Program capability that improves the programming throughput by programming in one shot a buffer of 32 words/64 bytes.

Parametrics

M29W128GL-70N6E absolute maximum ratings: (1)Temperature under bias:-50℃ to 125℃; (2)Storage temperature:-65℃ to 150℃; (3)Input or output voltage:-0.6V to VCC +0.6V; (4)Supply voltage:-0.6V to 4V; (5)Input/output supply voltage:-0.6V to 4V; (6)Identification voltage:-0.6V to 13.5V; (7)Program voltage:-0.6V to 13.5V.

Features

M29W128GL-70N6E features: (1)VCC = 2.7 to 3.6 V for Program, Erase and Read; (2)VCCQ = 1.65 to 3.6 V for I/O buffers; (3)VPPH = 12 V for Fast Program (optional); (4)Page size: 8 words or 16 bytes; (5)Page access: 25, 30 ns; (6)Random access: 60 (only available upon customer request) or 70, 80 ns; (7)Fast Program commands: 32 words (64-byte write buffer); (8)Enhanced Buffered Program commands:256 words; (9)Programming time:16 μs per byte/word typical, Chip program time: 5 s with VPPH and 8 s without VPPH; (10)Program/Erase controller: Embedded byte/word program algorithms; (11)Program/ Erase Suspend and Resume:Read from any block during Program Suspend, Read and Program another block during Erase Suspend; (12)Unlock Bypass/Block Erase/Chip Erase/Write to Buffer/Enhanced Buffered Program commands; (13)Software protection:Volatile protection, Non-volatile protection, Password protection; (14)Common Flash interface: 64 bit security code; (15)128 word extended memory block: Extra block used as security block or to store additional information; (16)Low power consumption: Standby and automatic standby; (17)Minimum 100,000 Program/Erase cycles per block.

Diagrams

M29W128GL-70N6E pin configuration

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